Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illuminati...

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Bibliographic Details
Main Authors: Masaaki Shimatani, Shinpei Ogawa, Daisuke Fujisawa, Satoshi Okuda, Yasushi Kanai, Takao Ono, Kazuhiko Matsumoto
Format: Article
Language:English
Published: AIP Publishing LLC 2016-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4944622

Internet

http://dx.doi.org/10.1063/1.4944622

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