An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-...

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Bibliographic Details
Main Authors: Mohammad Abdul Alim, Christophe Gaquiere, Giovanni Crupi
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Micromachines
Subjects:
gallium nitride (GaN)
high electron-mobility transistor (HEMT)
equivalent-circuit modeling
microwave frequency
scattering-parameter measurements
temperature
Online Access:https://www.mdpi.com/2072-666X/12/5/549

Internet

https://www.mdpi.com/2072-666X/12/5/549

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