A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An...

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Bibliographic Details
Main Authors: Yaodong Zhu, Yongsheng Huang, Haifu Wu, Zakiud Din, Jianzhong Zhang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Crosstalk phenomenon
gate driver
gate threshold
negative gate voltage
SiC MOSFET
Online Access:https://ieeexplore.ieee.org/document/9481319/

Internet

https://ieeexplore.ieee.org/document/9481319/

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