A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

• Main Authors: Yaodong Zhu, Yongsheng Huang, Haifu Wu, Zakiud Din, Jianzhong Zhang
• Format: Article
• Language: English
• Published: IEEE 2021-01-01
• Series: IEEE Access
• Subjects: Crosstalk phenomenon; gate driver; gate threshold; negative gate voltage; SiC MOSFET
• Online Access: https://ieeexplore.ieee.org/document/9481319/

In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An auxiliary MOSFET branch between the gate and source of SiC MOSFET is adopted to generate negative and zero gate voltage when SiC MOSFET is turned off. The negative gate voltage may reduce the positive gate crosstalk voltage, and zero gate voltage may reduce negative gate crosstalk voltage. Both the simulations and experiments are carried out to verify the feasibility and high performance of the proposed multi-level gate driver. Compared to the conventional gate driver, the proposed multi-level gate driver reduces the positive crosstalk voltage to −2.2V, and the negative crosstalk voltage to −4.4V, respectively.