A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An...
Main Authors: | Yaodong Zhu, Yongsheng Huang, Haifu Wu, Zakiud Din, Jianzhong Zhang |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9481319/ |
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