Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method
Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductor...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-06-01
|
| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721004150 |