Mottness Collapse in 1T-TaS_{2−x}Se_{x} Transition-Metal Dichalcogenide: An Interplay between Localized and Itinerant Orbitals

Mottness Collapse in 1T-TaS_{2−x}Se_{x} Transition-Metal Dichalcogenide: An Interplay between Localized and Itinerant Orbitals

The layered transition-metal dichalcogenide 1T-TaS_{2} has been recently found to undergo a Mott-insulator-to-superconductor transition induced by high pressure, charge doping, or isovalent substitution. By combining scanning tunneling microscopy measurements and first-principles calculations, we in...

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Bibliographic Details
Main Authors: Shuang Qiao, Xintong Li, Naizhou Wang, Wei Ruan, Cun Ye, Peng Cai, Zhenqi Hao, Hong Yao, Xianhui Chen, Jian Wu, Yayu Wang, Zheng Liu
Format: Article
Language:English
Published: American Physical Society 2017-12-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.7.041054

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http://doi.org/10.1103/PhysRevX.7.041054

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