Microscopic origin of low frequency noise in MoS2 field-effect transistors

Microscopic origin of low frequency noise in MoS2 field-effect transistors

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise wit...

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Bibliographic Details
Main Authors: Subhamoy Ghatak, Sumanta Mukherjee, Manish Jain, D. D. Sarma, Arindam Ghosh
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4895955

Internet

http://dx.doi.org/10.1063/1.4895955

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