Microscopic origin of low frequency noise in MoS2 field-effect transistors

Microscopic origin of low frequency noise in MoS2 field-effect transistors

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise wit...

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Main Authors: Subhamoy Ghatak, Sumanta Mukherjee, Manish Jain, D. D. Sarma, Arindam Ghosh
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4895955
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spelling doaj-ccf6db2a13484df6954661762e08dc722020-11-24T21:29:46ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092515092515-710.1063/1.4895955019492APMMicroscopic origin of low frequency noise in MoS2 field-effect transistorsSubhamoy Ghatak0Sumanta Mukherjee1Manish Jain2D. D. Sarma3Arindam Ghosh4Department of Physics, Indian Institute of Science, Bangalore 560 012, IndiaSolid State Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, IndiaSolid State Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, IndiaWe report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices.http://dx.doi.org/10.1063/1.4895955
collection DOAJ
language English
format Article
sources DOAJ
author Subhamoy Ghatak
Sumanta Mukherjee
Manish Jain
D. D. Sarma
Arindam Ghosh
spellingShingle Subhamoy Ghatak
Sumanta Mukherjee
Manish Jain
D. D. Sarma
Arindam Ghosh
Microscopic origin of low frequency noise in MoS2 field-effect transistors
APL Materials
author_facet Subhamoy Ghatak
Sumanta Mukherjee
Manish Jain
D. D. Sarma
Arindam Ghosh
author_sort Subhamoy Ghatak
title Microscopic origin of low frequency noise in MoS2 field-effect transistors
title_short Microscopic origin of low frequency noise in MoS2 field-effect transistors
title_full Microscopic origin of low frequency noise in MoS2 field-effect transistors
title_fullStr Microscopic origin of low frequency noise in MoS2 field-effect transistors
title_full_unstemmed Microscopic origin of low frequency noise in MoS2 field-effect transistors
title_sort microscopic origin of low frequency noise in mos2 field-effect transistors
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2014-09-01
description We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS2) field-effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO2 interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS2 contacts also play a significant role in determining noise magnitude in these devices.
url http://dx.doi.org/10.1063/1.4895955
work_keys_str_mv AT subhamoyghatak microscopicoriginoflowfrequencynoiseinmos2fieldeffecttransistors
AT sumantamukherjee microscopicoriginoflowfrequencynoiseinmos2fieldeffecttransistors
AT manishjain microscopicoriginoflowfrequencynoiseinmos2fieldeffecttransistors
AT ddsarma microscopicoriginoflowfrequencynoiseinmos2fieldeffecttransistors
AT arindamghosh microscopicoriginoflowfrequencynoiseinmos2fieldeffecttransistors
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