Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices
One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V charac...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4941839 |