Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test

Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test

This paper investigates the degradation mechanism of pressure-sintered silver (s-Ag) film for silicon carbide (SiC) chip assembly with a 2-millimeter-thick copper substrate by means of thermal shock test (TST). Two different types of silver paste, nano-sized silver paste (NP) and nano-micron-sized p...

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Bibliographic Details
Main Authors: Keisuke Wakamoto, Takukazu Otsuka, Ken Nakahara, Takahiro Namazu
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Energies
Subjects:
sintered silver
porosity
thermal mechanical reliability design
fracture mechanism
low thermal impedance packaging
Online Access:https://www.mdpi.com/1996-1073/14/17/5532

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https://www.mdpi.com/1996-1073/14/17/5532

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