Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced b...

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Bibliographic Details
Main Authors: Eric G. Stevens, Jeffrey A. Clayhold, Hung Doan, Robert P. Fabinski, Jaroslav Hynecek, Stephen L. Kosman, Christopher Parks
Format: Article
Language:English
Published: MDPI AG 2017-12-01
Series:Sensors
Subjects:
interline CCD
EMCCD
quantum efficiency
low noise
gain aging
Online Access:https://www.mdpi.com/1424-8220/17/12/2841

Internet

https://www.mdpi.com/1424-8220/17/12/2841

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