Modelling and solving of IGBT's transient analysis model based on the finite state machine
Abstract To accurately obtain the switching characteristics of insulated gate bipolar transistors (IGBT), this paper proposes an IGBT's transient analysis model (TAM) based on the finite state machine (FSM). Firstly, the IGBT switching process in the basic converter unit is segmented in the tim...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12163 |