Eradicated unintentional incorporated donor-type impurities of ZnO
Impurity control is essential for semiconductor doping. Through the systematic analysis of pollution sources, we determined that the residual electrons of as-grown unintentional doped zinc oxide (ZnO) films were derived from the unintentional incorporation of silicon, which grown by molecular beam e...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5022998 |