Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect

Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect

In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal si...

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Bibliographic Details
Main Authors: A. Acharyya, S. Banerjee, J. P. Banerjee
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2012-12-01
Series:Radioengineering
Subjects:
Chirp bandwidth
frequency chirping
large-signal simulation
pulsed DDR IMPATT
temperature transients
Online Access:http://www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdf

Internet

http://www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdf

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