Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect
In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal si...
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Spolecnost pro radioelektronicke inzenyrstvi
2012-12-01
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Online Access: | http://www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdf |
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doaj-cdc3b682adb34195b9b7b567a2979ae02020-11-24T23:51:52ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122012-12-0121412181225Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient EffectA. AcharyyaS. BanerjeeJ. P. BanerjeeIn this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal simulation method based on non-sinusoidal voltage excitation incorporating the transient thermal effect has been developed by the authors. Results show that the device is capable of delivering a peak pulsed power output of 17.5 W with 12.8% efficiency when the voltage modulation is 60%. The maximum junction temperature rise is 350.2 K for a peak pulsed bias current of 6.79 A with 100 ns pulsewidth and 0.5 percent duty cycle; whereas the chirp bandwidth is 8.3 GHz.www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdfChirp bandwidthfrequency chirpinglarge-signal simulationpulsed DDR IMPATTtemperature transients |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
A. Acharyya S. Banerjee J. P. Banerjee |
spellingShingle |
A. Acharyya S. Banerjee J. P. Banerjee Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect Radioengineering Chirp bandwidth frequency chirping large-signal simulation pulsed DDR IMPATT temperature transients |
author_facet |
A. Acharyya S. Banerjee J. P. Banerjee |
author_sort |
A. Acharyya |
title |
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect |
title_short |
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect |
title_full |
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect |
title_fullStr |
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect |
title_full_unstemmed |
Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect |
title_sort |
large-signal simulation of 94 ghz pulsed silicon ddr impatts including the temperature transient effect |
publisher |
Spolecnost pro radioelektronicke inzenyrstvi |
series |
Radioengineering |
issn |
1210-2512 |
publishDate |
2012-12-01 |
description |
In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal simulation method based on non-sinusoidal voltage excitation incorporating the transient thermal effect has been developed by the authors. Results show that the device is capable of delivering a peak pulsed power output of 17.5 W with 12.8% efficiency when the voltage modulation is 60%. The maximum junction temperature rise is 350.2 K for a peak pulsed bias current of 6.79 A with 100 ns pulsewidth and 0.5 percent duty cycle; whereas the chirp bandwidth is 8.3 GHz. |
topic |
Chirp bandwidth frequency chirping large-signal simulation pulsed DDR IMPATT temperature transients |
url |
http://www.radioeng.cz/fulltexts/2012/12_04_1218_1225.pdf |
work_keys_str_mv |
AT aacharyya largesignalsimulationof94ghzpulsedsiliconddrimpattsincludingthetemperaturetransienteffect AT sbanerjee largesignalsimulationof94ghzpulsedsiliconddrimpattsincludingthetemperaturetransienteffect AT jpbanerjee largesignalsimulationof94ghzpulsedsiliconddrimpattsincludingthetemperaturetransienteffect |
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