Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with high ferroele...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0035515 |