Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation

In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreov...

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Bibliographic Details
Main Authors: Qianying Zheng, Liangping Xia, Linlong Tang, Chunlei Du, Hongliang Cui
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/3/585