Low Voltage Graphene-Based Amplitude Modulator for High Efficiency Terahertz Modulation
In this paper, a high-efficiency terahertz amplitude modulation device based on a field-effect transistor has been proposed. The polarization insensitive modulator is designed to achieve a maximum experimental modulation depth of about 53% within 5 V of gate voltages using monolayer graphene. Moreov...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-03-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/10/3/585 |