Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified. Along this line, improvements achieved by the implementation of uniaxial strain in nanowires (NW), the benefits of high-k/meta...

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Bibliographic Details
Main Authors: Qing-Tai Zhao, Simon Richter, Christian Schulte-Braucks, Lars Knoll, Sebastian Blaeser, Gia Vinh Luong, Stefan Trellenkamp, Anna Schafer, Andreas Tiedemann, Jean-Michel Hartmann, Konstantin Bourdelle, Siegfried Mantl
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
strained Si Nanowire
SiGe
Tunnel-FET
Online Access:https://ieeexplore.ieee.org/document/7031858/

Internet

https://ieeexplore.ieee.org/document/7031858/

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