Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods
In this article, the work-function fluctuation (WKF) of nanosized metal grains is estimated and compared with the cuboid and Voronoi methods for 10-nm-gate gate-all-around silicon nanowire n-MOSFETs. For the methods having different metal grain numbers (MGNs) and 1000 randomly generated samples, we...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9305254/ |