X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic solar cells. It concerns both innovative and conventional fabrication processes. Due to the dynamic essence of the phenomena and to the coup...

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Bibliographic Details
Main Authors: Hadjer Ouaddah, Maike Becker, Thècle Riberi-Béridot, Maria Tsoutsouva, Vasiliki Stamelou, Gabrielle Regula, Guillaume Reinhart, Isabelle Périchaud, Fabrice Guittonneau, Laurent Barrallier, Jean-Paul Valade, Alexander Rack, Elodie Boller, José Baruchel, Nathalie Mangelinck-Noël
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Crystals
Subjects:
silicon
growth
grains
defects
twins
strain
Online Access:https://www.mdpi.com/2073-4352/10/7/555

Internet

https://www.mdpi.com/2073-4352/10/7/555

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