Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface field (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. H...

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Bibliographic Details
Main Authors: Hui Gao, Ruixia Yang, Yonghui Zhang
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/13/8/1958