A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs

A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and turn-off overvoltage of a SiC MOSFET become more...

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Bibliographic Details
Main Authors: Jiangui Chen, Yan Li, Mei Liang
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/12/9/1640