A Compact Model of MoS<sub>2</sub> Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes

A Compact Model of MoS<sub>2</sub> Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes

In this letter, a compact model for charge and drain current in molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs) is developed, which is valid from ballistic to quasi-ballistic to drift-diffusion electronic transport regimes. Considering the influence of trap charges...

Full description

Bibliographic Details
Main Authors: Jiawei Zeng, Wanling Deng, Changjian Zhou, Jie Peng, Junkai Huang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Molybdenum disulfide (MoS???)
charge model
current-voltage (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">I</italic>-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V</italic>) characteristics
Online Access:https://ieeexplore.ieee.org/document/9027944/

Internet

https://ieeexplore.ieee.org/document/9027944/

Similar Items