0.5 µW Sub-Threshold Operational Transconductance Amplifiers Using 0.15 µm Fully Depleted Silicon-on-Insulator (FDSOI) Process

0.5 µW Sub-Threshold Operational Transconductance Amplifiers Using 0.15 µm Fully Depleted Silicon-on-Insulator (FDSOI) Process

We present a low voltage, low power operational transconductance amplifier (OTA) designed using a Fully Depleted Silicon-on-Insulator (FDSOI) process. For very low voltage application down to 0.5 V, two-stage miller-compensated OTAs with both p-channel MOSFET (PMOS) and n-channel MOSFET (NMOS) diffe...

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Bibliographic Details
Main Authors: Piotr Olejarz, Kyoungchul Park, Samuel MacNaughton, Mehmet R. Dokmeci, Sameer Sonkusale
Format: Article
Language:English
Published: MDPI AG 2012-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
sub-threshold
weak inversion
analog design
OTA
low power
FDSOI
Online Access:http://www.mdpi.com/2079-9268/2/2/155

Internet

http://www.mdpi.com/2079-9268/2/2/155

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