Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-10142-y |