Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.

Bibliographic Details
Main Authors: Sandip Mondal, V. Venkataraman
Format: Article
Language:English
Published: Nature Publishing Group 2019-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-10142-y
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spelling doaj-cf616e4fa3904d91a6e56503303a68832021-05-11T12:15:38ZengNature Publishing GroupNature Communications2041-17232019-05-011011710.1038/s41467-019-10142-yLow temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layerSandip Mondal0V. Venkataraman1Department of Physics, Indian Institute of ScienceDepartment of Physics, Indian Institute of ScienceRealizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.https://doi.org/10.1038/s41467-019-10142-y
collection DOAJ
language English
format Article
sources DOAJ
author Sandip Mondal
V. Venkataraman
spellingShingle Sandip Mondal
V. Venkataraman
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
Nature Communications
author_facet Sandip Mondal
V. Venkataraman
author_sort Sandip Mondal
title Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_short Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_full Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_fullStr Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_full_unstemmed Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
title_sort low temperature below 200 °c solution processed tunable flash memory device without tunneling and blocking layer
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-05-01
description Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.
url https://doi.org/10.1038/s41467-019-10142-y
work_keys_str_mv AT sandipmondal lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer
AT vvenkataraman lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer
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