Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.
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Nature Publishing Group
2019-05-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-019-10142-y |
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doaj-cf616e4fa3904d91a6e56503303a68832021-05-11T12:15:38ZengNature Publishing GroupNature Communications2041-17232019-05-011011710.1038/s41467-019-10142-yLow temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layerSandip Mondal0V. Venkataraman1Department of Physics, Indian Institute of ScienceDepartment of Physics, Indian Institute of ScienceRealizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention.https://doi.org/10.1038/s41467-019-10142-y |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Sandip Mondal V. Venkataraman |
spellingShingle |
Sandip Mondal V. Venkataraman Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer Nature Communications |
author_facet |
Sandip Mondal V. Venkataraman |
author_sort |
Sandip Mondal |
title |
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer |
title_short |
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer |
title_full |
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer |
title_fullStr |
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer |
title_full_unstemmed |
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer |
title_sort |
low temperature below 200 °c solution processed tunable flash memory device without tunneling and blocking layer |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2019-05-01 |
description |
Realizing efficient non-volatile flash memories that do not require high temperature processing to create suitable charge trapping remains a challenge. Here, the authors report low-temperature solution-processed oxide-based flash memories with low leakage, tunable memory storage and good retention. |
url |
https://doi.org/10.1038/s41467-019-10142-y |
work_keys_str_mv |
AT sandipmondal lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer AT vvenkataraman lowtemperaturebelow200csolutionprocessedtunableflashmemorydevicewithouttunnelingandblockinglayer |
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