Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy
The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient e...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC and ACA
2018-09-01
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| Series: | Structural Dynamics |
| Online Access: | http://dx.doi.org/10.1063/1.5038015 |