Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3%) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-orie...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4895109 |