Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

Abstract CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to res...

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Bibliographic Details
Main Authors: Lin Jin, Long Wen, Li Liang, Qin Chen, Yunfei Sun
Format: Article
Language:English
Published: SpringerOpen 2018-02-01
Series:Nanoscale Research Letters
Subjects:
Surface plasmons
Plasmonics
Transparent conductor oxides
Epsilon-near-zero
Online Access:http://link.springer.com/article/10.1186/s11671-018-2446-0

Internet

http://link.springer.com/article/10.1186/s11671-018-2446-0

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