Shear induced deformation twinning evolution in thermoelectric InSb

Abstract Twin boundary (TB) engineering has been widely applied to enhance the strength and plasticity of metals and alloys, but is rarely adopted in thermoelectric (TE) semiconductors. Our previous first-principles results showed that nanotwins can strengthen TE Indium Antimony (InSb) through In–Sb...

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Bibliographic Details
Main Authors: Zhongtao Lu, Ben Huang, Guodong Li, Xiaolian Zhang, Qi An, Bo Duan, Pengcheng Zhai, Qingjie Zhang, William A. Goddard
Format: Article
Language:English
Published: Nature Publishing Group 2021-07-01
Series:npj Computational Materials
Online Access:https://doi.org/10.1038/s41524-021-00581-x