Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs
In nanoscale MOSFETs with sub-10 nm channels, the source-to-drain tunneling is expected to be a critical bottleneck, especially in III-V devices on account of their extremely low effective masses. Also, to maintain electrostatic integrity at extremely small gate lengths, the channels need to be made...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7394100/ |