Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and c...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6823663/ |