Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Amorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area. The presented good operational stabilities under...

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Bibliographic Details
Main Authors: Qungang Ma, Haihong Wang, Liufei Zhou, Jiali Fan, Congwei Liao, Xiaojun Guo, Shengdong Zhang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thin-film transistor
IGZO
gate driver
stability
Online Access:https://ieeexplore.ieee.org/document/8760363/

Internet

https://ieeexplore.ieee.org/document/8760363/

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