Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Amorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area. The presented good operational stabilities under...

Full description

Bibliographic Details
Main Authors: Qungang Ma, Haihong Wang, Liufei Zhou, Jiali Fan, Congwei Liao, Xiaojun Guo, Shengdong Zhang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thin-film transistor
IGZO
gate driver
stability
Online Access:https://ieeexplore.ieee.org/document/8760363/
id doaj-d1579c6c2941479cae2e0d716cc85522
record_format Article
spelling doaj-d1579c6c2941479cae2e0d716cc855222021-04-05T16:57:43ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01771772110.1109/JEDS.2019.29196778760363Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal DisplaysQungang Ma0https://orcid.org/0000-0002-2280-5737Haihong Wang1Liufei Zhou2Jiali Fan3https://orcid.org/0000-0003-2923-0160Congwei Liao4Xiaojun Guo5https://orcid.org/0000-0003-3946-9458Shengdong Zhang6https://orcid.org/0000-0002-1815-8661School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaResearch and Development Center, Nanjing CEC Panda LCD Technology Company Ltd., Nanjing, ChinaResearch and Development Center, Nanjing CEC Panda LCD Technology Company Ltd., Nanjing, ChinaDepartment of Electronic Engineering, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, ChinaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaDepartment of Electronic Engineering, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, ChinaSchool of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, ChinaAmorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area. The presented good operational stabilities under both positive gate bias temperature stress (PBTS) and negative gate bias temperature stress (NBTS) tests can well meet the requirements for pixel switching. However, considering even threshold voltage shift under long term positive bias stress might affect proper operation of the gate driver on array (GOA), a design with a pulse gating scheme is proposed, consisting of 13 TFTs and 1 capacitor, to avoid long term continuous bias stressing of the TFT. With the proposed GOA design, a 32-inch QUHD (7680×4320) highresolution liquid crystal display (LCD) panel with a 7 mm wide bezel is achieved. The reliability of the GOA circuit is well proved through standard aging tests.https://ieeexplore.ieee.org/document/8760363/Thin-film transistorIGZOgate driverstability
collection DOAJ
language English
format Article
sources DOAJ
author Qungang Ma
Haihong Wang
Liufei Zhou
Jiali Fan
Congwei Liao
Xiaojun Guo
Shengdong Zhang
spellingShingle Qungang Ma
Haihong Wang
Liufei Zhou
Jiali Fan
Congwei Liao
Xiaojun Guo
Shengdong Zhang
Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
IEEE Journal of the Electron Devices Society
Thin-film transistor
IGZO
gate driver
stability
author_facet Qungang Ma
Haihong Wang
Liufei Zhou
Jiali Fan
Congwei Liao
Xiaojun Guo
Shengdong Zhang
author_sort Qungang Ma
title Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
title_short Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
title_full Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
title_fullStr Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
title_full_unstemmed Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
title_sort robust gate driver on array based on amorphous igzo thin-film transistor for large size high-resolution liquid crystal displays
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2019-01-01
description Amorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area. The presented good operational stabilities under both positive gate bias temperature stress (PBTS) and negative gate bias temperature stress (NBTS) tests can well meet the requirements for pixel switching. However, considering even threshold voltage shift under long term positive bias stress might affect proper operation of the gate driver on array (GOA), a design with a pulse gating scheme is proposed, consisting of 13 TFTs and 1 capacitor, to avoid long term continuous bias stressing of the TFT. With the proposed GOA design, a 32-inch QUHD (7680×4320) highresolution liquid crystal display (LCD) panel with a 7 mm wide bezel is achieved. The reliability of the GOA circuit is well proved through standard aging tests.
topic Thin-film transistor
IGZO
gate driver
stability
url https://ieeexplore.ieee.org/document/8760363/
work_keys_str_mv AT qungangma robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT haihongwang robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT liufeizhou robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT jialifan robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT congweiliao robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT xiaojunguo robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
AT shengdongzhang robustgatedriveronarraybasedonamorphousigzothinfilmtransistorforlargesizehighresolutionliquidcrystaldisplays
_version_ 1721540651950014464

Similar Items