Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays
Amorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area. The presented good operational stabilities under...
Main Authors: | Qungang Ma, Haihong Wang, Liufei Zhou, Jiali Fan, Congwei Liao, Xiaojun Guo, Shengdong Zhang |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8760363/ |
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