Many-Tier Vertical GAAFET (V-FET) for Ultra-Miniaturized Standard Cell Designs Beyond 5 nm
The GAAFET (gate-all-around FET) is expected to replace FinFETs in future nodes due to its excellent channel controllability. It is also expected to be an impressive device due to its horizontal or vertical transistor structures. Vertical GAAFETs (V-FETs) are expected to be a promising device compar...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9163379/ |