In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications

Abstract The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron...

Full description

Bibliographic Details
Main Authors: Da-Peng Xu, Lin-Jie Yu, Xu-Dong Chen, Lin Chen, Qing-Qing Sun, Hao Zhu, Hong-Liang Lu, Peng Zhou, Shi-Jin Ding, David Wei Zhang
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
Oxygen vacancies
Band alignment
In situ XPS
UPS
Ellipsometry
Online Access:http://link.springer.com/article/10.1186/s11671-017-2068-y

Internet

http://link.springer.com/article/10.1186/s11671-017-2068-y

Similar Items