On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances. The device can operate at collector current densities &gt;100 mA/&#x03BC;m<sup>2</sup>, and i...

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Bibliographic Details
Main Authors: Tak H. Ning, Jin Cai
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Bipolar transistors
complementary bipolar transistors
lateral bipolar transistors
SOI devices
Online Access:https://ieeexplore.ieee.org/document/6423299/

Internet

https://ieeexplore.ieee.org/document/6423299/

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