Tuning chemical potential in the dirac cone by compositional engineering
To realize fully topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Bi2Se3 (BS) and Bi2Te3 (BT) thin films do not show in general topological transport as the chemical potential doesn’t lie entirely in the bulk gap. We...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4999254 |