Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique
Compressively strained SiGe-On-Insulator (SGOI) made by the Ge-condensation technique is used as a performance booster for ultrathin fully depleted silicon-on-insulator transistor technology. Here, we report on the evolution of the compressive strain in the SiGe film along the formation of local SGO...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5088441 |