Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlO<sub>x</sub> for Crystalline Si Passivation

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlO<sub>x</sub> for Crystalline Si Passivation

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlO<sub>x</sub> layers of different thicknesses and submitted to annealing under va...

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Bibliographic Details
Main Authors: Zhen Zheng, Junyang An, Ruiling Gong, Yuheng Zeng, Jichun Ye, Linwei Yu, Ileana Florea, Pere Roca i Cabarrocas, Wanghua Chen
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
Kelvin probe force microscopy
c-Si passivation
surface potential
AlO<sub>x</sub>
SiO<sub>x</sub>
Online Access:https://www.mdpi.com/2079-4991/11/7/1803

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