Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern a...

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Bibliographic Details
Main Authors: Teng-Hsiang Chang, Chiao Chang, Yen-Ho Chu, Chien-Chieh Lee, Jenq-Yang Chang, I-Chen Chen, Tomi T. Li
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/906037

Internet

http://dx.doi.org/10.1155/2014/906037

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