UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal...

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Bibliographic Details
Main Authors: Manuel Bastuck, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, Mike Andersson
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Proceedings
Subjects:
gas sensors
SiC-FET
dynamic operation
gate bias cycled operation
linear discriminant analysis
Online Access:https://www.mdpi.com/2504-3900/2/13/999

Internet

https://www.mdpi.com/2504-3900/2/13/999

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