Low-Temperature In-Induced Holes Formation in Native-SiO<sub>x</sub>/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Low-Temperature In-Induced Holes Formation in Native-SiO<sub>x</sub>/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO<sub>x</sub> layer on Si(111)...

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Bibliographic Details
Main Authors: Rodion R. Reznik, Konstantin P. Kotlyar, Vladislav O. Gridchin, Evgeniy V. Ubyivovk, Vladimir V. Federov, Artem I. Khrebtov, Dmitrii S. Shevchuk, George E. Cirlin
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Materials
Subjects:
nanowires
silicon
GaAs
self-catalyzed growth
molecular-beam epitaxy
Online Access:https://www.mdpi.com/1996-1944/13/16/3449

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https://www.mdpi.com/1996-1944/13/16/3449

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