Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket

Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket

The detrimental lateral band-to-band tunneling (L-BTBT) governing the OFF-state performance of the junctionless (JL) FETs is more pronounced in emerging Nanotube (NT) transistor architectures. This restricts the scaling of NT JLFETs irrespective of their ultimate electrostatic gate control due to ad...

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Bibliographic Details
Main Authors: Aakash Kumar Jain, Jaspreet Singh, Mamidala Jagadesh Kumar
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gate induced drain leakage (GIDL)
Junctionless accumulation mode FET (JAMFET)
Nanotube JAMFET (NT JAMFET)
Nanotube Junctionless FET (NT JLFET)
parasitic bipolar junction transistor (BJT)
Drain induced barrier lowering (DIBL)
Online Access:https://ieeexplore.ieee.org/document/8798975/

Internet

https://ieeexplore.ieee.org/document/8798975/

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