A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, bu...
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| Format: | Article |
| Language: | English |
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MDPI AG
2014-03-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/7/3/2155 |