Deep Learning Algorithms for the Work Function Fluctuation of Random Nanosized Metal Grains on Gate-All-Around Silicon Nanowire MOSFETs
Device simulation has been explored and industrialized for over 40 years; however, it still requires huge computational cost. Therefore, it can be further advanced using deep learning (DL) algorithms. We for the first time report an efficient and accurate DL approach with device simulation for gate-...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9430564/ |