High-Performance LPCVD-SiN<sub>x</sub>/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-<inline-formula> <tex-math notation="LaTeX">$\text{m}{\Omega} \cdot$ </tex-math></inline-formula>cm<sup>2</sup> for Power Device Applications
We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 °C. Excellent LPCVD-SiNx/InAlGaN interface and SiNx film quality were...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8462727/ |