Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing
Si single crystal was implanted with 230 keV He<sup>+</sup> ions to a fluence of 5 × 10<sup>16</sup>/cm<sup>2</sup> at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microsco...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/17/5107 |